LI ZI-HUA, TANG QING. Discussion on Vacuum Impregnation Process for All-film Shunt Capacitors. [J]. Power capacitor & reactive power compensation, 2012, 33(4): 58-64.
LI ZI-HUA, TANG QING. Discussion on Vacuum Impregnation Process for All-film Shunt Capacitors. [J]. Power capacitor & reactive power compensation, 2012, 33(4): 58-64. DOI: 10.14044/j.1674-1757.pcrpc.2012.04.012.
Discussion on Vacuum Impregnation Process for All-film Shunt Capacitors
摘要
在全膜并联电容器的制造过程中
真空浸渍工艺过程是极其关键的。全膜并联电容器真空浸渍工艺过程是否完善
既与电容器单元内部结构
尤其是元件结构及其在真空浸渍工艺过程所处的姿态密切相关
又与真空浸渍工艺过程中的3个关键参数
即:温度、真空度、时间
密不可分。本文对这两方面进行了初步探讨
希望对提升全膜并联电容器的产品质量有所帮助.
Abstract
The vacuum impregnation process is extremely critical in the production process of all-film shunt capacitors.Perfection of vacuum impregnation process of all-film shunt capacitors production is closely related not only to internal structure of all-film shunt capacitor unit
especially to the elements structure and its configuration in the process of vacuum impregnation
but also to such three key parameters in the process as temperature
vacuum and time.In this paper
a preliminary discussion on those two aspects is made
which is expected to help to improve quality of all-film shunt capacitors.