Preparation of Bi1.5ZnNb1.5O7（BZN） Film Material for Capacitors with High Energy Storage Density for Reliable Measuring Device of Smart Distribution Networks

doi:10.14044/j.1674-1757.pcrpc.2019.03.016

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Preparation of Bi_1.5ZnNb_1.5O₇（BZN） Film Material for Capacitors with High Energy Storage Density for Reliable Measuring Device of Smart Distribution Networks

更新时间：2024-09-14

- Preparation of Bi_1.5ZnNb_1.5O₇（BZN） Film Material for Capacitors with High Energy Storage Density for Reliable Measuring Device of Smart Distribution Networks
- POWER CAPACITOR & REACTIVE POWER COMPENSATION Vol. 40, Issue 3, Pages: 84-88(2019)
- 作者机构：
  
  1. 南瑞集团有限公司(国网电力科学研究院有限公司)
  2. 国电南瑞科技股份有限公司
  3. 国网天津市电力公司
  4. 天津大学电气信息与自动化工程学院
- 作者简介：
- 基金信息：
- DOI：10.14044/j.1674-1757.pcrpc.2019.03.016
  CLC： TM531.4
- Published：2019，
- 稿件说明：
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[1]韩韬,么军,葛荣刚,姜宁,鲁文,葛磊蛟.面向智能配电网可信量测装置高储能密度的电力电容器介质Bi_(1.5)ZnNb_(1.5)O_7(BZN)薄膜材料制备[J].电力电容器与无功补偿,2019,40(03):84-88+95.

Preparation of Bi_1.5ZnNb_1.5O₇（BZN） Film Material for Capacitors with High Energy Storage Density for Reliable Measuring Device of Smart Distribution Networks. [J]. Power capacitor & reactive power compensation, 2019, 40(3): 84-88.
[1]韩韬,么军,葛荣刚,姜宁,鲁文,葛磊蛟.面向智能配电网可信量测装置高储能密度的电力电容器介质Bi_(1.5)ZnNb_(1.5)O_7(BZN)薄膜材料制备[J].电力电容器与无功补偿,2019,40(03):84-88+95. DOI： 10.14044/j.1674-1757.pcrpc.2019.03.016.

Preparation of Bi_1.5ZnNb_1.5O₇（BZN） Film Material for Capacitors with High Energy Storage Density for Reliable Measuring Device of Smart Distribution Networks. [J]. Power capacitor & reactive power compensation, 2019, 40(3): 84-88. DOI： 10.14044/j.1674-1757.pcrpc.2019.03.016.

摘要

随着配电网向着可靠性、稳定性、安全性和交互性方向的发展

其对电力电容器的储能性能提出了更高的要求。为制备高储能密度的电力电容器用介质材料

利用磁控溅射技术在Pt-Si基底上制备Bi

1.5

ZnNb

1.5

（BZN）薄膜

通过在氧气氛中进行后退火处理

有效地提高了BZN薄膜的结晶性能

并对不同退火条件下BZN薄膜的介电常数、介质损耗因数、漏电流密度、击穿场强和储能密度进行测试分析

表明:氧气氛退火处理能提高BZN薄膜的电学性能

当在10 000 Pa以上的氧气压下退火后

BZN薄膜的储能密度达到9.0 J/cm

左右

提高到未经过退火BZN薄膜的4.5倍。

Abstract

With the development of power distribution network toward reliability

stability

safetyand interactivity

which sets higher requirement for the charging performance of power capacitor.For preparing dielectric material of power capacitor with high energy density

1.5

ZnNb

1.5

（BZN）thin film is prepared on Pt-Si substrates by the use of magnetron sputteringtechnology. The crystallizationperformance of BZNfilm is improved significantly through post-annealing treatment in the

oxygen. The dielectric constant

loss tangent

leakage current density

breakdown field strength and energy density of BZN film at different annealing treatment are tested and studied

showing that the annealing treatment in the oxygen can improve electrical performance of BZN film. After annealing treatment above the oxygen pressure of 10 000 Pa

the energy storage density of BZN film reaches around 9.0 J/cm

which is about 4.5 times that of the un-annealed BZN film.

关键词

电力电容器薄膜储能密度击穿场强介电常数

Keywords

power capacitorfilmenergy storage densitybreakdown field strengthdielectric constant

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