Metallized dielectric film

as one of the key elements of high voltage capacitor

is used widely in in the fields of power systems

pulse power and new-energy vehicles (NEVs) by virtue of its outstanding resistance in high-temperature and high-voltage. Also

the metallized film possesses excellent self-healing properties

the extremely thin metal electrodes are very prone to fracture and failure under large current

which is a crucial factor affecting safe operation of capacitor. In addition

the issue of large volume and small capacity also severely restricts the application of thin film capacitor

thus giving rise to forming the technical barriers. In the process of the development of miniaturization and high capacity for the metallized dielectric film

except for the influence of new dielectric film material itself

the effect of the structure design of ultra-thin high-square-resistance metallized electrode on the performance of thin film capacitors is also gradually beginning to emerge and become prominent. In this paper

the electrode structure design of high-square-resistance metallized film in recent years

as well as the application and development of surface/interface engineering in the electrode structure design are reviewed. Meanwhile

the limitations and problems of designing metallized electrode structure based on the electrode thickness

elements and patterning from the past to the present are summarized. The role of interface in electrical properties with the thickness of metal electrode changing from micron-to nano-scale is analyzed. The relationship between self-healing properties and electrode structure interaction is emphasized. Combined with the relevant interface research methodology of medium film metallization concerning the ultra-thin metallized film interface in optoelectronic semiconductors

this work provides an important reference on how to develop the structural design and performance control of ultra-thin metallized film by using interface for the storage energy ultra-thin metallized film in the field of new energy in the future. The prediction of macro-electrical performance regulation via the structural and interface design of metallized film in the micro-fundamental domain is systematically described

and the localization of the key technologies related to the film capacitors is fundamentally proposed.